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Vishay / Siliconix IRLD110
MOSFET N-CH 100V 1A 4-DIP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 100V 1A 4-DIP
Product Details
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 50pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 115mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5Ohm @ 500mA, 10V
- Series
- -
- Power Dissipation (Max)
- 330mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23-3
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 60V