Vishay / Siliconix SI1021R-T1-GE3

Product Details

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.4A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

3-SMD, Flat Leads

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

25.8mOhm @ 4A, 4.5V

Series

U-MOSVI

Power Dissipation (Max)

500mW (Ta)

FET Type

P-Channel

Supplier Device Package

UFM

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

24.8nC @ 4.5V