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Vishay / Siliconix SI1026X-T1-E3
MOSFET 2N-CH 60V 0.305A SOT563F
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- FET Type
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 0.75nC @ 4.5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 60V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 30pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 305mA, 190mA
- Power - Max
- 250mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Base Part Number
- SI1029
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 500mA, 10V
- Series
- TrenchFET®
- Supplier Device Package
- SC-89-6