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Vishay / Siliconix SI1062X-T1-GE3
MOSFET N-CH 20V SC-89
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 33600
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 500mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.8V, 8V
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Vgs(th) (Max) @ Id
- 1.35V @ 2.5µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1190mOhm @ 100mA, 8V
- Series
- FemtoFET™
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 3-PICOSTAR
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 0.281nC @ 10V
- Vgs (Max)
- 10V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 10.5pF @ 10V