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Vishay / Siliconix SI1072X-T1-E3
MOSFET N-CH 30V 1.3A SOT563F
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V 1.3A SOT563F
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 190mW (Ta), 200mW (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SC-70-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 0.84nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 35pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 400mA (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 850mOhm @ 250mA, 4.5V