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Vishay / Siliconix SI1404BDH-T1-GE3
MOSFET N-CH 30V 1.9A SOT363
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 30V 1.9A SOT363
Product Details
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 295pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 1.8V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 57mOhm @ 4A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 860mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 6-TSOP
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 5nC @ 4.5V