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Vishay / Siliconix SI2306BDS-T1-GE3
MOSFET N-CH 30V 3.16A SOT23-3
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 3500
- Description
- MOSFET N-CH 30V 3.16A SOT23-3
Product Details
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 251mOhm @ 650mA, 10V
- Series
- U-MOSII
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- ES6 (1.6x1.6)
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 137pF @ 15V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 1.4A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Vgs(th) (Max) @ Id
- 2.6V @ 1mA