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Vishay / Siliconix SI2309CDS-T1-GE3
MOSFET P-CH 60V 1.6A SOT23-3
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 85741
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 3V, 8V
- Mounting Type
- Surface Mount
- Package / Case
- 6-SMD, Flat Leads
- Vgs(th) (Max) @ Id
- 1.55V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 24mOhm @ 4A, 8V
- Series
- NexFET™
- Power Dissipation (Max)
- 2.3W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 6-SON
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 2.8nC @ 4.5V
- Vgs (Max)
- +10V, -8V
- Drain to Source Voltage (Vdss)
- 25V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 340pF @ 12.5V