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Vishay / Siliconix SI2312BDS-T1-E3
MOSFET N-CH 20V 3.9A SOT23-3
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 115901
Product Details
- Package / Case
- 6-UDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 800mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 9.7A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 690mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- U-DFN2020-6 (Type E)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 50.6nC @ 8V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2425pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.2V, 4.5V
- Mounting Type
- Surface Mount