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Vishay / Siliconix SI2315BDS-T1-E3
MOSFET P-CH 12V 3A SOT23-3
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 148481
Product Details
- Rds On (Max) @ Id, Vgs
- 480mOhm @ 600mA, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 280mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SC-70-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 1.4nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 600mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)