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Vishay / Siliconix SI2323DS-T1-E3
MOSFET P-CH 20V 3.7A SOT23-3
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 53795
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 19nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1020pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.7A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 39mOhm @ 4.7A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 750mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SOT-23-3 (TO-236)