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Vishay / Siliconix SI2333CDS-T1-GE3
MOSFET P-CH 12V 7.1A SOT-23
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 20726
- Description
- MOSFET P-CH 12V 7.1A SOT-23
Product Details
- Series
- HEXFET®
- Power Dissipation (Max)
- 2W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- Micro6™(TSOP-6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 3.9nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 88pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 600mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 5.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.2Ohm @ 360mA, 10V