Vishay / Siliconix SI2342DS-T1-GE3

Product Details

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

89mOhm @ 1.5A, 4.5V

Series

TrenchFET®

Power Dissipation (Max)

2W (Ta), 4.2W (Tc)

FET Type

P-Channel

Supplier Device Package

6-TSOP

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

833pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.5A (Ta), 13A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6