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Vishay / Siliconix SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO-236
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.09
- Stock
- 33000
Product Details
- Rds On (Max) @ Id, Vgs
- 42mOhm @ 5A, 10V
- Series
- U-MOSVI
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SOT-23F
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 8.2nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 560pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-3 Flat Leads
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA
- Operating Temperature
- 150°C (TJ)