Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI2366DS-T1-GE3
MOSFET N-CH 30V 5.8A SOT-23
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.45
- Stock
- 883
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 830mW (Ta)
- Packaging
- Cut Tape (CT)
- Supplier Device Package
- TO-92-3
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 40pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 500mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number
- BS170
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- -
- Rds On (Max) @ Id, Vgs
- 5Ohm @ 200mA, 10V