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Vishay / Siliconix SI2369DS-T1-GE3
MOSFET P-CH 30V 7.6A TO-236
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 146662
Product Details
- Vgs (Max)
- ±16V
- Gate Charge (Qg) (Max) @ Vgs
- 8.3nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 401pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 1.4A (Ta)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Base Part Number
- DMN10H220
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- -
- Rds On (Max) @ Id, Vgs
- 220mOhm @ 1.6A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 1.3W (Ta)
- Packaging
- Digi-Reel®
- Supplier Device Package
- SOT-23