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Vishay / Siliconix SI2392DS-T1-GE3
MOSFET N-CH 100V 3.1A SOT-23
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 100V 3.1A SOT-23
Product Details
- Package / Case
- PowerPAK® ChipFET™ Single
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -50°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9.8mOhm @ 10A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.1W (Ta), 31W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® ChipFet Single
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 120nC @ 8V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4300pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount