Vishay / Siliconix SI3127DV-T1-GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

120mOhm @ 2.8A, 4.5V

Series

-

Power Dissipation (Max)

1.25W (Ta)

FET Type

P-Channel

Supplier Device Package

SOT-23

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V