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Vishay / Siliconix SI3900DV-T1-GE3
MOSFET 2N-CH 20V 2A 6-TSOP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 5957
Product Details
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 2A
- Part Status
- Active
- Power - Max
- 1.8W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 230mOhm @ 1A, 10V
- Supplier Device Package
- 8-SOP
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 9.2nC @ 10V
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 100V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 497pF @ 50V