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Vishay / Siliconix SI4406DY-T1-GE3
MOSFET N-CH 30V 13A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V 13A 8-SOIC
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.2W (Ta), 4.6W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 150V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 332pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.3A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2Ohm @ 500mA, 10V