Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI4427BDY-T1-GE3
MOSFET P-CH 30V 9.7A 8SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 4985
- Description
- MOSFET P-CH 30V 9.7A 8SOIC
Product Details
- FET Type
- N-Channel
- Power Dissipation (Max)
- 70W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- DPAK
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 40V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 2150pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- STD80
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- DeepGATE™, STripFET™ VI
- Rds On (Max) @ Id, Vgs
- 6mOhm @ 40A, 10V