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Vishay / Siliconix SI4434DY-T1-E3
MOSFET N-CH 250V 2.1A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 17062
- Description
- MOSFET N-CH 250V 2.1A 8-SOIC
Product Details
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 580pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- STD13
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- MDmesh™ II Plus
- Rds On (Max) @ Id, Vgs
- 380mOhm @ 5.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 110W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- DPAK