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Vishay / Siliconix SI4434DY-T1-GE3
MOSFET N-CH 250V 2.1A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 5144
- Description
- MOSFET N-CH 250V 2.1A 8-SOIC
Product Details
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 7nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 450V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 160pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 1.5A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number
- STD2N
- Vgs(th) (Max) @ Id
- 3.7V @ 250µA
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Series
- SuperMESH™
- Rds On (Max) @ Id, Vgs
- 4.5Ohm @ 500mA, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 30W (Tc)
- Packaging
- Tube
- Supplier Device Package
- I-PAK