Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI4447DY-T1-GE3
MOSFET P-CH 40V 3.3A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2056
Product Details
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6.7mOhm @ 15A, 4.5V
- Series
- -
- Power Dissipation (Max)
- 2.3W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PowerDI3333-8
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 156nC @ 10V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5940pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18A (Ta), 40A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount