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Vishay / Siliconix SI4453DY-T1-E3

MOSFET P-CH 12V 10A 8-SOIC

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
100
Description
MOSFET P-CH 12V 10A 8-SOIC

Product Details

Vgs (Max)
±8V
Drain to Source Voltage (Vdss)
12V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
900mV @ 600µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 14A, 4.5V
Series
TrenchFET®
Power Dissipation (Max)
1.5W (Ta)
FET Type
P-Channel
Supplier Device Package
8-SO
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
165nC @ 5V