Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI4463BDY-T1-E3
MOSFET P-CH 20V 9.8A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 20081
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 75V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1650pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2V @ 80µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20.5mOhm @ 25A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 136W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO252-3
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 72nC @ 10V