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Vishay / Siliconix SI4490DY-T1-E3
MOSFET N-CH 200V 2.85A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2913
- Description
- MOSFET N-CH 200V 2.85A 8-SOIC
Product Details
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 490pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.3A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 5V
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 270mOhm @ 780mA, 5V
- Series
- -
- Power Dissipation (Max)
- 1.3W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 4-DIP, Hexdip, HVMDIP
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 5V