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Vishay / Siliconix SI4778DY-T1-GE3
MOSFET N-CH 25V 8A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 3
- Description
- MOSFET N-CH 25V 8A 8-SOIC
Product Details
- Rds On (Max) @ Id, Vgs
- 36.5mOhm @ 4A, 10V
- Power Dissipation (Max)
- 2.4W (Ta)
- Series
- PowerTrench®
- Supplier Device Package
- 6-WDFN (2x2)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 9nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 80V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 595pF @ 40V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 2.5V @ 20µA
- Operating Temperature
- -55°C ~ 150°C (TJ)