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Vishay / Siliconix SI4808DY-T1-GE3
MOSFET 2N-CH 30V 5.7A 8SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.82
- Stock
- 0
Product Details
- Supplier Device Package
- 9-BGA (1.35x1.35)
- Series
- eGaN®
- Gate Charge (Qg) (Max) @ Vgs
- 0.16nC @ 5V, 0.044nC @ 5V
- FET Type
- 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- Drain to Source Voltage (Vdss)
- 100V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 16pF @ 50V, 7pF @ 50V
- FET Feature
- GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C
- 1.7A, 500mA
- Part Status
- Discontinued at Digi-Key
- Power - Max
- -
- Mounting Type
- Surface Mount
- Package / Case
- 9-VFBGA
- Vgs(th) (Max) @ Id
- 2.5V @ 100µA, 2.5V @ 20µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V