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Vishay / Siliconix SI4816BDY-T1-GE3
MOSFET 2N-CH 30V 5.8A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2821
Product Details
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 2000pF @ 15V, 8200pF @ 15V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Part Status
- Active
- Power - Max
- 38W (Tc), 83W (Tc)
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TA)
- Rds On (Max) @ Id, Vgs
- 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
- Supplier Device Package
- 8-PowerPair® (6x5)
- Series
- TrenchFET® Gen IV
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 4.5V, 92nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V