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Vishay / Siliconix SI4825DY-T1-E3

MOSFET P-CH 30V 8.1A 8-SOIC

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
100
Description
MOSFET P-CH 30V 8.1A 8-SOIC

Product Details

Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
-
FET Feature
Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
1V @ 250µA (Min)
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
45mOhm @ 5A, 10V
Series
LITTLE FOOT®
Power Dissipation (Max)
2W (Ta)
FET Type
P-Channel
Supplier Device Package
8-SO
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V