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Vishay / Siliconix SI4829DY-T1-E3
MOSFET P-CH 20V 2A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET P-CH 20V 2A 8-SOIC
Product Details
- Rds On (Max) @ Id, Vgs
- 5.9mOhm @ 20A, 10V
- Power Dissipation (Max)
- 6.2W (Ta), 52W (Tc)
- Series
- AlphaSGT™
- Supplier Device Package
- UltraSO-8™
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 30nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1480pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Ta), 46A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-PowerSMD, Flat Leads
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)