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Vishay / Siliconix SI4831BDY-T1-GE3

MOSFET P-CH 30V 6.6A 8-SOIC

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
100
Description
MOSFET P-CH 30V 6.6A 8-SOIC

Product Details

FET Feature
Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
72mOhm @ 3.6A, 10V
Series
LITTLE FOOT®
Power Dissipation (Max)
1.93W (Ta), 2.75W (Tc)
FET Type
P-Channel
Supplier Device Package
8-SO
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 15V