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Vishay / Siliconix SI4860DY-T1-E3
MOSFET N-CH 30V 11A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V 11A 8-SOIC
Product Details
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 8V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 1.6A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Vgs(th) (Max) @ Id
- 450mV @ 250µA (Min)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 1.8A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 568mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SC-70-6 (SOT-363)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 7nC @ 4.5V