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Vishay / Siliconix SI4888DY-T1-E3
MOSFET N-CH 30V 11A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V 11A 8-SOIC
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1500pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 70A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9mOhm @ 30A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 93W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 19nC @ 5V