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Vishay / Siliconix SI4890DY-T1-E3
MOSFET N-CH 30V 11A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 30V 11A 8-SOIC
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 10.5A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 5.2W (Ta), 83.3W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 155nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 80V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5160pF @ 40V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 28A (Tc)