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Vishay / Siliconix SI4896DY-T1-GE3

MOSFET N-CH 80V 6.7A 8SOIC

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
11
Description
MOSFET N-CH 80V 6.7A 8SOIC

Product Details

FET Type
N-Channel
Power Dissipation (Max)
45W (Tc)
Packaging
Digi-Reel®
Supplier Device Package
DPAK
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
620V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
385pF @ 25V
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
2.7A (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number
STD3N
Vgs(th) (Max) @ Id
4.5V @ 50µA
Operating Temperature
150°C (TJ)
Series
SuperMESH3™
Rds On (Max) @ Id, Vgs
2.5Ohm @ 1.4A, 10V