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Vishay / Siliconix SI4900DY-T1-GE3
MOSFET 2N-CH 60V 5.3A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2907
Product Details
- Supplier Device Package
- 8-PowerPair®
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 10.5nC @ 4.5V, 23.1nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1000pF @ 15V, 2425pF @ 15V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 40A (Tc), 60A (Tc)
- Part Status
- Active
- Power - Max
- 20.2W, 40W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 2.4V @ 250µA, 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V