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Vishay / Siliconix SI4910DY-T1-GE3
MOSFET 2N-CH 40V 7.6A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 7.1A
- Power - Max
- 1.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- SI4913
- Vgs(th) (Max) @ Id
- 1V @ 500µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 9.4A, 4.5V
- Series
- TrenchFET®
- Supplier Device Package
- 8-SO
- FET Type
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 65nC @ 4.5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 20V