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Vishay / Siliconix SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A 8-SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- Standard
- Input Capacitance (Ciss) (Max) @ Vds
- 855pF @ 20V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 7.6A, 7.9A
- Power - Max
- 3.1W, 3.2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- SI4569
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 27mOhm @ 6A, 10V
- Series
- TrenchFET®
- Supplier Device Package
- 8-SO
- FET Type
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 32nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 40V