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Vishay / Siliconix SI4966DY-T1-E3
MOSFET 2N-CH 20V 8SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 16A, 18A
- Part Status
- Obsolete
- Power - Max
- 1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6.6mOhm @ 16A, 10V
- Supplier Device Package
- Power56
- Series
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 25V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1765pF @ 13V