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Vishay / Siliconix SI4966DY-T1-GE3
MOSFET 2N-CH 20V 8SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 7.5A, 4.5V
- Supplier Device Package
- 8-SO
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 55nC @ 10V
- FET Type
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 12V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- -
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Obsolete
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 450mV @ 250µA (Min)