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Vishay / Siliconix SI5402BDC-T1-GE3
MOSFET N-CH 30V 4.9A 1206-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V 4.9A 1206-8
Product Details
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.3W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 1206-8 ChipFET™
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 4.8A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 37mOhm @ 4.8A, 4.5V