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Vishay / Siliconix SI5499DC-T1-GE3
MOSFET P-CH 8V 6A 1206-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 278
- Description
- MOSFET P-CH 8V 6A 1206-8
Product Details
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6Ohm @ 100mA, 4V
- Series
- -
- Power Dissipation (Max)
- 425mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 3-DFN1006 (1.0x0.6)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 0.58nC @ 4V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 50V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 50.54pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 200mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4V
- Mounting Type
- Surface Mount
- Package / Case
- 3-UFDFN