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Vishay / Siliconix SI5509DC-T1-GE3
MOSFET N/P-CH 20V 6.1A 1206-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 20V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 3.1A, 2.1A
- Power - Max
- 1.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Base Part Number
- SI5513
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 75mOhm @ 3.1A, 4.5V
- Series
- TrenchFET®
- Supplier Device Package
- 1206-8 ChipFET™
- FET Type
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 6nC @ 4.5V