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Vishay / Siliconix SI5513CDC-T1-GE3
MOSFET N/P-CH 20V 4A 1206-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 10559
Product Details
- FET Feature
- Logic Level Gate
- Part Status
- Active
- Power - Max
- 3.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 4.3A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs
- 4.2nC @ 5V
- Series
- TrenchFET®
- Drain to Source Voltage (Vdss)
- 20V
- FET Type
- N and P-Channel
- Input Capacitance (Ciss) (Max) @ Vds
- 285pF @ 10V
- Packaging
- Digi-Reel®
- Current - Continuous Drain (Id) @ 25°C
- 4A, 3.7A