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Vishay / Siliconix SI5515CDC-T1-GE3
MOSFET N/P-CH 20V 4A 1206-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 270
Product Details
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 7A, 10V
- Supplier Device Package
- 8-SOIC
- Series
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 575pF @ 15V
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 7A, 5A
- Part Status
- Active
- Power - Max
- 900mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)