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Vishay / Siliconix SI5858DU-T1-GE3

MOSFET N-CH 20V 6A PPAK CHIPFET

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
100
Description
MOSFET N-CH 20V 6A PPAK CHIPFET

Product Details

FET Feature
Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
84mOhm @ 3.7A, 10V
Series
LITTLE FOOT®
Power Dissipation (Max)
1.7W (Ta), 3.1W (Tc)
FET Type
P-Channel
Supplier Device Package
1206-8 ChipFET™
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 10V