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Vishay / Siliconix SI5908DC-T1-GE3
MOSFET 2N-CH 20V 4.4A 1206-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2975
Product Details
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 14.2A
- Part Status
- Active
- Power - Max
- 2.6W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.6mOhm @ 17A, 10V
- Supplier Device Package
- PowerDI5060-8
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 41.9nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 40V
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 2026pF @ 30V