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Vishay / Siliconix SI5913DC-T1-E3
MOSFET P-CH 20V 4A 1206-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET P-CH 20V 4A 1206-8
Product Details
- Rds On (Max) @ Id, Vgs
- 9mOhm @ 11A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.08W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-TSSOP
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 48nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 8.6A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- Vgs(th) (Max) @ Id
- 600mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)